LDMOS造句

Integrated high voltage LDMOS on SIMOX Wafer

Breakdown Voltage and ESD Protection of RF-LDMOS;

Research on Reliability and Temperature Characteristic of LDMOS;

Analytical Models of LDMOS Based on Numerical Simulation;

Research and Design of High Voltage RESURF-LDMOS;

The Research of LDMOS Microwave Wideband Power Amplifier in L-Band

Extraction of the LDMOS Transistor's Shunt Capacitance and Design of Class-E Power Amplifiers

采用tone负载牵引法得到了LDMOS晶体管MRF输入和输出阻抗

The research of LDMOS current characteristic involves the linear current region, cut-off saturation region, quasi-saturation region and providing the simplified analytical expression.

For isolated LDMOS devices, the resistance between the lateral isolation wall (32) (tied to the source) and the buried layer (24) is reduced, thereby reducing substrate injection current.

The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.

LDMOS电流特*的研究涉及了器件电流线*区、夹断饱和区和准饱和区，并给出了简化的电流特*解析表达式。

对于隔离的LDMOS器件，横向隔离壁(32)(结合至源极)与埋层(24)之间的电阻减少，从而减少了衬底注入电流。

二百该模型考虑了载流子的速度饱和现象和寄生双极*晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。