HEMT造句

Microwave Power Characteristics of AlGaN/GaN HEMT;

A New AIGaN/GaN HEMT Design

The Research of RTD/HEMT/MSM s Optoelectrical Integration;

Electromechanical Coupled Model on 2DEG in AlGaN/GaN HEMT

Schottky Characteristic of High Performance AlGaN/GaN HEMT

Development and Application of InP HEMT and InP HBT

Low Noise Amplifier Design Based on GaAs HEMT;

Study on the Key Fabrication Techniques of High-Power AlGaN/GaN HEMT;

Study on AlGaN/GaN HEMT with Long Gate-Width and High Output Power at X Band

The Ohmic Contacts to GaN HEMT Epilayers and Its Applications to Hall Measurements;

Optimization on gate-recessed AlGaN/GaN HEMT with low damage etching technique

Using this model, the parameters of HEMT such as channel conductance, transconductance, gate capacitance, and cut-off frequency are derived.

Fujitsu points out that using GaN HEMT technology allows more than 6 times the output power of existing amplifiers using gallium-arsenide (GaAs) transistors.

高电子迁移率晶体管（HEMT）是基于异质结调制掺杂发展起来的一种高频高速半导体器件。

由本文模型还推导出了HEMT沟道电导、跨导、栅电容和截止频率等微波参数表达式。

一种高*能的Q波段单片HEMT收发芯片已改进用于毫米波商用数字无线电系统。

一般来说，功率管器件的欧姆接触触点以及栅极是采用金材料制作，但是在基于GaN的HEMT中如果仍采用金材料制作这些结构则必须采用特殊的CMOS制程工艺。